TES, the new generation of ion & electron sources.
The smallest microwave plasma source on the market !
Choose the TES model that best suits your needs
Product vs Processes |
Neutralization |
Electron chemistry |
High power electron beam |
Etching |
Sputtering |
Surface activation |
Beam line |
Accelerator |
Mass spectrometry |
Figuring |
Surface modification |
---|---|---|---|---|---|---|---|---|---|---|---|
TES-GO | |||||||||||
TES-GO-electrons | x | x | x | ||||||||
TES-GO-ions broad beam | x | x | x | x | x | ||||||
TES-GO-ions high brightness | x | x | x | x | x | ||||||
TES-40 | |||||||||||
TES-40-electrons | x | x | x | ||||||||
TES-40-ions broad beam | x | x | x | x | x | ||||||
TES-40-ions high brightness | x | x | x | x | x | ||||||
TES-63 | |||||||||||
TES-63-electrons | x | x | x | ||||||||
TES-63-ions | x | x | x | x | x | ||||||
TES-63-ions high brightness | x | x | x | x | |||||||
TES-63-ions scanner | x | x | x | ||||||||
TES-100 | |||||||||||
TES-100-electrons | x | x | x | ||||||||
TES-100-ions | x | x | x | x | x | ||||||
TES-100-ions high brightness | x | x | x | x |
COMPARATIVE CHARACTERISTICS
TES-GO | TES-40 | TES-63 | TES-100 | |
---|---|---|---|---|
Discharge | ECR filament free | ECR filament free | ECR filament free | ECR filament free |
Gas | H₂, He, N₂, O₂, noble gas, molecular gas | H₂, He, N₂, O₂, noble gas, molecular gas | H₂, He, N₂, O₂, noble gas, molecular gas | H₂, He, N₂, O₂, noble gas, molecular gas |
Microwave power typ. (2.45 GHz) | 0.5 to 5 W | 0.5 to 5 W | 0.5 to 5 W | 0.5 to 5 W |
Maximum Energy | 5 kV | 5 kV | 15 kV | 30 kV |
Maximum power beam | 200W | 200W | 1kW | 3 kW |
Diameter in vacuum | 36,5 mm | 36,5 mm | 62 mm | 96 mm |
Flange type | Mobile under vacuum. CF40 for HV, HF & gas feedthroughs | CF40 | CF63 | CF100 |
Cooling | None | None | None | None |
Cable length |
2 m
(option: 5m) |
2 m
(option: 5m) |
2 m
(option: 5m) |
2 m
(option: 5m) |
Electronics | Two 19" rack mount (4U) | Two 19" rack mount (4U) | Two 19" rack mount (4U or 6U) | Two 19" rack mount (6U) |
Hardware control | Microcontroller | Microcontroller | Microcontroller | Microcontroller |
Communication protocol | Ethernet UDP, RS232 | Ethernet UDP, RS232 | Ethernet UDP, RS232 | Ethernet UDP, RS232 |
User interface |
Labview executable (ethernet UDP only) |
Labview executable (ethernet UDP only) |
Labview executable (ethernet UDP only) |
Labview executable (ethernet UDP only) |
Source gas control | Mass-flow controller (or micro-leak valve) | Mass-flow controller (or micro-leak valve) | Mass-flow controller (or micro-leak valve) | Mass-flow controller (or micro-leak valve) |
NEW
About TES-GO
————-
Applications
- Etching
- Sputtering
- Figuring
- Surface modification & activation
- Electron chemistry
- Neutralization
- Beam line
Benefits
- Mobile under vacuum
- Stability over time
- Compactness
- Reduced maintenance, filament free, no cooling
- Plug & Play
- Independent electronics rack, customizable
Options
- Einzel lens
- Cable length
Specifications
TES-GO | ions-high brightness | ions-broad beam | electrons-neutralizer |
---|---|---|---|
Applications | Etching, figuring, sputtering, surface activation, beam line | Etching, sputtering, surface activation | Electron chemistry, neutralization, surface modification |
Energy range | 0.5 – 5 kV | 0.1 – 5 kV | 0.1 – 5 kV |
Current | 10 to 500 µA | 0.3 to 3 mA | 0.1 to 50 mA |
Beam size (typ. @ 4 cm) | 0.3 to 15mm | Energy dependent | 3-30 mm |
Source length (exc. connectors) | 192 mm with Einzel | 150 mm | 150 mm / 192 mm with Einzel |
About TES-40
————-
Applications
- Etching
- Sputtering
- Figuring
- Surface modification & activation
- Electron chemistry
- Neutralization
Benefits
- Stability over time
- Compactness
- Reduced maintenance, filament free, no cooling
- Plug & Play
- Independent electronics rack, customizable
Options
- Einzel lens
- Cable length
Specifications
TES-40 | electrons-neutralizer | ions-broad beam | ions-high brightness |
---|---|---|---|
Applications | Electron chemistry, neutralization | Etching, sputtering, surface activation | Etching, figuring, sputtering, surface activation |
Energy range | 0.1 – 5 kV | 0.1 – 5 kV | 0.5 – 5 kV |
Current | 0.1 to 50 mA | 0.3 to 3 mA | 10 to 500 µA |
Beam size (typ. @ 4 cm) | 3-30 mm | Energy dependent | 0.3 to 15mm |
Insertion depth | 137 mm / 190 mm with Einzel | 137 mm | 190 mm with Einzel |
About TES-63
————-
Applications
- Etching
- Sputtering
- Figuring
- Mass spectroscopy
- Accelerator
- Beam line
- Electron chemistry
Benefits
- High brightness system
- High power e-beam
- Stability over time
- Compactness
- CW or pulsed
- No maintenance, filament free, no cooling
- Plug & Play
- Independent electronics rack
Options
- Einzel lens
- Scanner
- Cable length
Specifications
TES-63 | electrons | ions | ions-high brightness | ions-scanner |
---|---|---|---|---|
Applications | Electron chemistry (down to 100 V) / High power e-beam up to 1.5 kW | Beam line, accelerator, mass spectroscopy, sputtering | Beam line, accelerator, mass spectroscopy, etching | Etching, Figuring |
Energy range | 100 V – 15 kV | 0.5 – 15 kV | 0.5– 15 kV | 0.5 – 15 kV |
Current |
0.1 to 5 µA - typ. with 0.3 mm extractor 10 to 500 µA - typ. with 3 mm extractor |
0.3 to 300 µA | 10 to 500 µA | |
Beam size (typ. @ 10 cm from Einzel) | Energy and focus dependent | 0.3 -30 mm | 0.5-5 mm | 0.3 to 5mm |
Insertion depth | from 150 mm or longer on demand | from 150 mm or longer on demand | 300 mm with Einzel | 360 mm with Einzel and scanner |
About TES-100
————-
Applications
- Accelerator
- Mass spectroscopy
- Surface modification
- Electron chemistry
Benefits
- High brightness system
- High power e-beam
- Stability over time
- CW or pulsed
- No maintenance, filament free, no cooling
- Plug & Play CF100
- Independent electronics rack, customizable
Options
- Einzel lens
- Cable length
Specifications
TES-100 | electrons | ions | ions-high stability |
---|---|---|---|
Applications |
Electron chemistry (down to 100 V) High power e-beam up to 1.5 kW |
Accelerator, mass spectroscopy, surface modification | Accelerator, mass spectroscopy |
Energy range | 100 V – 30 kV | 5 – 30 kV | 0.5 – 30 kV |
Energy spread | - | 1% @30kV | 3 10-⁴ @30kV |
Current | - |
3 to 30 µA - typ. with 1 mm extractor 30 to 300 µA - typ. with 3 mm extractor |
0.5 to 5 µA - typ. with 0.3 mm extractor |
Beam size | Energy and focus dependent | 0.5 -20 mm | 0.5 -3 mm |
Insertion depth | from 169 mm or longer on demand | from 169 mm or longer on demand | from 169 mm or longer on demand |
A user-friendly control & monitoring software
The source comes with a user-friendly control & monitoring interface, that allows you to control the beam, record data, and run stored recipes. Labview drivers are available to integrate our software with other systems.